onsemi FCP380N60E

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220
$ 1.343
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FCP380N60E6.050244
Rochester ElectronicsFCP380N60E25.806
2h
Flip ElectronicsFCP380N60E107.200
6d
NewarkFCP380N60E0800
AvnetFCP380N60E0715
5h

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IHS

Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

Master Electronics

onsemi

Fairchild Semiconductor

element14 APAC

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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-02-22
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descrições

Descrições de onsemi FCP380N60E fornecidas pelos seus distribuidores.

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220
onsemi
Power Field-Effect Transistor, 10.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
IHS
MOSFET, N-CH, 600V, 10.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:106W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
Farnell
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

Imagens

element14 APAC
Rochester Electronics

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