onsemi BCW69

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250mW Surface Mount TO-236AB (SOT23)
$ 0.025
Obsolete
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DistributorSKUMinPkg
Rochester ElectronicsBCW696.875
2h
element14 APACBCW6901
15h
FarnellBCW6901
1d
Win SourceWS-BCW6958.0001500
2h
Worldway ElectronicsBCW6916.0167Tape & Reel
1h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi BCW69.

IHS

Datasheet4 páginas16 anos atrás
Datasheet0 páginashá 0 anos

Farnell

Fairchild Semiconductor

element14

Newark

Histórico de estoque

Tendência de 3 meses:
Restocked
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14

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Descrições

Descrições de onsemi BCW69 fornecidas pelos seus distribuidores.

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250mW Surface Mount TO-236AB (SOT23)
Avnet
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
IHS
Transistor; Transistor Type:Bipolar; Package/Case:SOT-323; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:100mA; Voltage Rating:45V ;RoHS Compliant: Yes
Newark
TRANSISTOR,PNP,45V,0.1A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:330mW; DC Collector Current:-100mA; DC Current Gain hFE:90; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:120; Package / Case:SOT-23; Power Dissipation Pd:330mW; Termination Type:SMD
element14 APAC

Imagens

Newark
Rochester Electronics

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