onsemi AFGHL75T65SQD

Trans IGBT Chip N-CH 650V 80A 375000mW Automotive 3-Pin(3+Tab) TO-247 Tube
$ 3.419
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IHS

Datasheet9 páginas6 anos atrás

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Future Electronics

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Tendência de 3 meses:
-7.34%

Cadeia de suprimentos

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Descrições

Descrições de onsemi AFGHL75T65SQD fornecidas pelos seus distribuidores.

Trans IGBT Chip N-CH 650V 80A 375000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Field Stop Trench IGBT 650 V, 75 A, AEC Q101 qualified, TO2473L package
AEC 101 Qualified, 650V, 75A Fieldstop 4 trench IGBT
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
晶体管, IGBT, AEC101, 650V, 80A, 175度 C, 375W;
IGBT Transistors 650V/75A FS4 IGBT
IGBT TRENCH FS 650V 80A TO-247-3
IC RTC CLK/CALENDAR SPI 10UMAX
IGBT, SINGLE, 650V, 80A, TO-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:375W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

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