onsemi AFGHL50T65SQD

Trans IGBT Chip N-CH 650V 80A 268W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Rail
$ 2.85
Production
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DistributorSKUMinPkg
Avnet
2
AFGHL50T65SQD221.400450
13h
NewarkAFGHL50T65SQD1.3261
Rochester ElectronicsAFGHL50T65SQD420
10h
Verical
3
AFGHL50T65SQD115.650450
DigiKey488-AFGHL50T65SQD-ND2131Tube

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi AFGHL50T65SQD.

IHS

Datasheet9 páginas6 anos atrás

Master Electronics

Histórico de estoque

Tendência de 3 meses:
-0.02%
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Cadeia de suprimentos

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Descrições

Descrições de onsemi AFGHL50T65SQD fornecidas pelos seus distribuidores.

Trans IGBT Chip N-CH 650V 80A 268W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Rail
Richardson RFPD
AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT
onsemi
AEC 101 QUALIFIED, 650V, 50A FIE / IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-247-3
Win Source
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
Semicontronic
Transistor IGBT Chip N-Channel 650V 50A 3-Pin TO-247
Avnet Japan
IGBT Transistors 650V50A FS4 IGBT TO-247LL
Digi-ic_SMART PIONEER
晶体管, IGBT, 650V, 80A, 268W, TO-247;
element14 APAC
ON Semiconductor AFGHL50T65SQD
RS APAC
IGBT, SINGLE, 650V, 80A, TO-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:268W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
Newark

Imagens

Farnell

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