onsemi 2N5830

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 200mA 625mW 120V
$ 0.044
Obsolete
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DistributorSKUMinPkg
Verical
2
2N583015.5906834
Rochester Electronics2N583040.597
23h
Win SourceWS-4182858.000755
1d
Worldway Electronics2N583010.0977Bulk
23h
Fly-Wing Technology2N583028.625
21h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi 2N5830.

IHS

Datasheet2 páginashá 0 anos
Datasheet0 páginashá 0 anos

Fairchild Semiconductor

iiiC

Histórico de estoque

Tendência de 3 meses:
Restocked
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1970-08-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23

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Descrições

Descrições de onsemi 2N5830 fornecidas pelos seus distribuidores.

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 200mA 625mW 120V
Fly-Wing Technology
Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
IHS
PNP Silicon High Current Transistor 100V 200mA TO-92
Jameco
Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk
Verical
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics.
Fairchild Semiconductor
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:100V; Power Dissipation, Pd:625mW; DC Collector Current:200mA; DC Current Gain Max (hfe):80; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
Newark

Imagens

Jameco
Newark
iiiC
Rochester Electronics

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  • ON Semiconductor
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  • ON Semiconductor / Fairchild
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  • onsemi / Fairchild
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  • ON Semi - ON Semiconductor
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  • ON Semiconductor Inc.
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  • On Semiconductor Ltd