onsemi 2N5366

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 50mA 1V 100nA 625mW 250MHz
$ 0.044
Obsolete
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DistributorSKUMinPkg
Rochester Electronics2N536614.636
15h
Verical2N53667.3066834
Avnet2N536606K
17h
Farnell2N536601
2h
Component Stockers USA2N536628.698
>1wk

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi 2N5366.

IHS

Datasheet1 páginas17 anos atrás
Datasheet4 páginas23 anos atrás
Datasheet1 páginashá 0 anos
Datasheet3 páginas25 anos atrás

Jameco

Histórico de estoque

Tendência de 3 meses:
Restocked
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1989-03-03
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2010-12-03
LTD Date2011-06-03

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Descrições

Descrições de onsemi 2N5366 fornecidas pelos seus distribuidores.

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 50mA 1V 100nA 625mW 250MHz
Fly-Wing Technology
Small Signal Bipolar Transistor, 0.3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
IHS
Transistor GP BJT PNP 40V 0.5A 3-Pin TO-92
Avnet
RF Bipolar Transistor; Transistor Polarity:Dual P Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):40; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
Newark
TRANSISTOR, DUAL P 300MA TO-92; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Continuous Collector Current Ic:300mA; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92; Transistor Type:General Purpose
element14 APAC

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element14
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Rochester Electronics

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