Nexperia PEMD13,115

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
$ 0.139
Production
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DistributorSKUMinPkg
Rochester ElectronicsPEMD13,1151.600
23h
DigiKey
2
1727-PEMD13,115CT-ND1581Cut Tape
TME
2
PEMD13.11501
11h
AvnetPEMD13,115012K
1d
Arrow ElectronicsPEMD13,11504K

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Nexperia PEMD13,115.

IHS

Datasheet0 páginashá 0 anos

Nexperia

Farnell

TME

Future Electronics

Histórico de estoque

Tendência de 3 meses:
+22.64%
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Cadeia de suprimentos

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-10
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 3 years ago)

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Descrições

Descrições de Nexperia PEMD13,115 fornecidas pelos seus distribuidores.

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
Nexperia
Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SS-Mini T/R
North Star Micro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
IHS
1 PCS NPN,1 PCS PNP - Pre-Biased(Dual) 300mW 100mA 50V SOT-666 Digital Transistors ROHS
Dasenic
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Component Stockers USA
PEMD13 Series 50 V 100 mA SMT NPN/PNP Resistor-Equipped Transistor - SOT-666
Future Electronics
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:10 ;RoHS Compliant: Yes
Newark
TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:100mV; Current Ic Continuous a Max:5mA; Hfe Min:100; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
element14 APAC

Imagens

Nexperia
TME
LZChips
Future Electronics
Rochester Electronics

Nomes alternativos do fabricante

Nexperia possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Nexperia também pode ser conhecido(a) pelos seguintes nomes:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXP
  • Nexperi
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • NEXPERIA(Nexperia)
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia(Ahn Se)
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/N
  • NEXPERIA/PHILIPS
  • NEXPERIA USA INC (UA)
  • NEX-NXP
  • NEXPERIA USA INC (VA)
  • NEXPERIA (FORMERLY NXP) (4001801)

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • "PEMD13,115"
  • PEMD13115