Littelfuse IXYN80N90C3H1

Trans IGBT Chip N-CH 900V 115A 500000mW 4-Pin SOT-227B
$ 18.034
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Onlinecomponents.comIXYN80N90C3H1075Bulk
Master ElectronicsIXYN80N90C3H1075

Fichas técnicas e documentos

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IHS

Datasheet8 páginas10 anos atrás
Datasheet7 páginas10 anos atrás

TME

Future Electronics

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-09-14
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrições

Descrições de Littelfuse IXYN80N90C3H1 fornecidas pelos seus distribuidores.

Trans IGBT Chip N-CH 900V 115A 500000mW 4-Pin SOT-227B
Verical
Disc Igbt Xpt-Genx3 Sot-227Ui(Mini/ Tube |Littelfuse IXYN80N90C3H1
Newark
Planar Series - 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, SOT-227B, RoHS
Littelfuse SCT
IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
Jak Electronics
IGBT MOD 900V 115A 500W SOT-227B
DigiKey
900V, 70a, 2.7Vce, SOT-227B, miniBLOC
Future Electronics
Insulated Gate Bipolar Transistor
IHS
Configuration = Single / Continuous Collector Current (Ic) A = 115 / Collector-Emitter Voltage (Vceo) V = 900 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 500 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
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Imagens

Distrelec
TME
RS (Formerly Allied Electronics)

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