Littelfuse IXTN22N100L

Single N-Channel 1000 V 600 mOhm 700 W Power Mosfet - SOT-227B
$ 51.935
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DistributorSKUMinPkg
TME
2
IXTN22N100L01
9h
TTIIXTN22N100L0300Tube
22h
NewarkIXTN22N100L0300
Onlinecomponents.comIXTN22N100L075Bulk
Master ElectronicsIXTN22N100L075

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IHS

Datasheet6 páginas15 anos atrás
Datasheet5 páginas15 anos atrás

TME

Littelfuse SCT

Future Electronics

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrições

Descrições de Littelfuse IXTN22N100L fornecidas pelos seus distribuidores.

Single N-Channel 1000 V 600 mOhm 700 W Power Mosfet - SOT-227B
Future Electronics
Discmosfet N-Ch Linear Std Sot-227B(Mini/ Tube Rohs Compliant: Yes |Littelfuse IXTN22N100L
Newark
Trans MOSFET N-CH 1KV 22A 4-Pin SOT-227B
Verical
Power MOSFET N-Ch 1000V 22A SOT-227
RS (Formerly Allied Electronics)
Power Field-Effect Transistor, 22A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
Standard Series - 200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs, SOT-227B, RoHS
Littelfuse SCT
IXYS NMOS Linear, Vds=1000 V, 22 A, SOT-227, , 4
UnikeyIC
SOT-227B NCHL 1000V 22A MOSFET
Anglia
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 22 / Drain-Source Voltage (Vds) kV = 1 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Threshold Voltage V = 5.5 / Gate-Source Voltage V = 30 / Power Dissipation (Pd) W = 700 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Fall Time ns = 50 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 80 / Turn-ON Delay Time ns = 36 / Package Type = SOT-227B / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
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RS
RS (Formerly Allied Electronics)
Distrelec
TME
RS (Formerly Allied Electronics)
Future Electronics

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