Infineon IRS21084SPBF

600 V half-bridge gate driver IC with programmable deadtime, SOIC 14N, RoHS

Tube IRS21084SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 290mA 600mA 1W

IRS21084 Series 600 V 290 mA 20 V Supply Dual Half Bridge Driver - SOIC-14

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 14-pin SOIC, Tube

MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Non-Inv 14-Pin SOIC N Tube

Half Bridge Driver, Soft Turn-On, All High Voltage Pins on One Side, Separate High and Low Side Inputs, Programmable 540-5000ns Deadtime in a 14-Lead package

MOSFET/IGBT DRIVER, HALF BRIDGE, NSOIC14; Driver Configuration:Half Bridge; Peak Output Current:-; Supply Voltage Min:10V; Max:20V;

HALF BRIDGE DRIVER, SMD, SOIC14; Driver IC Type:MOSFET; No. of Outputs:2; Voltage, Output:620V; Output Current:290mA; Voltage, Supply Min:10V; Voltage, Supply Max:20V; Case Style:SOIC; No. of Pins:14; Operating Temperature Range:-40°C to +125°C; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Base Number:21084; Max Output Current:0.13A; Termination Type:SMD; Voltage, Output Max:20V

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High-side output in phase with HIN input; Low-side output out of phase with LIN input; Logic and power ground +/- 5 V offset; Internal 540 ns deadtime, and programmable up to 5 s with one external RDT resistor; Lower di/dt gate driver for better noise immunity