Infineon IRLR2905PBF
$ 0.97
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRLR2905PBF | 0 | 1 | Bulk | 20h | |||||||
| Farnell | IRLR2905PBF | 0 | 5 | 1d | ||||||||
| Microchip USA | IRLR2905PBF | 360 | 3500 | Bulk | 20h | |||||||
| Win Source | WS-IRLR2905PBF | 13.010 | 95 | 4h | ||||||||
| Worldway Electronics | IRLR2905PBF | 19.270 | 7 | Tube | 3h |
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Descrições
Descrições de Infineon IRLR2905PBF fornecidas pelos seus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 42 A, TO-252, IRLR2905-PBF
Single N-Channel 55 V 0.027 Ohm 48 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 36A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:55V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:69W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:27mohm; Package / Case:DPAK; Power Dissipation Pd:69W; Power Dissipation Pd:69W; Pulse Current Idm:160A; SMD Marking:IRLR2905; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating41 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
Power Dissipation69 W
Rds On Max27 mΩ
Recovery Time120 ns
Resistance27 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade