Infineon IRLR2705TRLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 28A; D-pak (TO-252AA); Pd 68W; -55DE
$ 0.798
Obsolete
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DistributorSKUMinPkg
Arrow ElectronicsIRLR2705TRLPBF2.8851
Future ElectronicsIRLR2705TRLPBF3.0003KTape & Reel
RS (Formerly Allied Electronics)IRLR2705TRLPBF03KBulk
10h
Farnell
3
IRLR2705TRLPBF9965Cut Tape
16h
Microchip USAIRLR2705TRLPBF1.9213500
11h

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IRLR2705TRLPBF.

IHS

Datasheet11 páginas21 anos atrás
Datasheet12 páginas21 anos atrás

DigiKey

RS (Formerly Allied Electronics)

Histórico de estoque

Tendência de 3 meses:
-45.46%
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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31

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Descrições

Descrições de Infineon IRLR2705TRLPBF fornecidas pelos seus distribuidores.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 28A;D-Pak (TO-252AA);PD 68W;-55de
RS (Formerly Allied Electronics)
Single N-Channel 55 V 0.04 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
Future Electronics
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 28 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
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Imagens

Infineon
Farnell
element14
element14
Distrelec
Future Electronics
LZChips

Nomes alternativos do fabricante

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • IRFIRLR2705TRLPBF
  • SP001552768