Infineon IRG4RC10UPBF

600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
$ 1.27
Obsolete
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DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRG4RC10UPBF0525Bulk
16h
Win SourceWS-IRG4RC10UPBF11.3003
1h
Worldway ElectronicsIRG4RC10UPBF19.2307Tube
1d
SHENGYU ELECTRONICSIRG4RC10UPBF11.1691
3d
KlychipIRG4RC10UPBFContato1
>1wk

Fichas técnicas e documentos

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IHS

Datasheet10 páginas21 anos atrás

Farnell

iiiC

Newark

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-04
LTD Date2013-05-04

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Descrições

Descrições de Infineon IRG4RC10UPBF fornecidas pelos seus distribuidores.

600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
International Rectifier
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IHS
Compliant Surface Mount 11 ns No SVHC SMD/SMT DPAK 8.5 A 3
Augswan
IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1
Farnell

Imagens

Newark
Farnell
TME
iiiC
International Rectifier

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