Infineon IRFZ44ELPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 0.023 Ohm; Id 48A; TO-262; Pd 110W; Vgs +/-20V
$ 1.39
Obsolete
Página do fabricanteFicha de dados

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DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRFZ44ELPBF0450Bulk
5h
Win SourceWS-IRFZ44ELPBF9309
13h
Worldway ElectronicsIRFZ44ELPBF17.4067
1d
North Star MicroNS-IRFZ44ELPBFContato
4d

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IRFZ44ELPBF.

IHS

Datasheet11 páginas21 anos atrás
Datasheet12 páginas21 anos atrás

Newark

RS (Formerly Allied Electronics)

DigiKey

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descrições

Descrições de Infineon IRFZ44ELPBF fornecidas pelos seus distribuidores.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-262;PD 110W;VGS +/-20V
RS (Formerly Allied Electronics)
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
IHS
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Infineon
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:48A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
element14 APAC

Imagens

Infineon
TME
RS (Formerly Allied Electronics)

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