Infineon IRFU3710ZPBF

MOSFET N-CH 100V 42A IPAK N-Channel 100 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

MOSFET, N Ch., Automotive, 100V, 56A, 18 MOHM, 69 NC QG, I-PAK, Pb-Free

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, TO-251-3, RoHS

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes

MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:220A; SMD Marking:IRFU3710ZPBF; Termination Type:Through Hole; Turn Off Time:53ns; Turn On Time:14ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V