Infineon IRFSL7430PBF
$ 1.53
Obsolete
Preço e estoque
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Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
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Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
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Descrições
Descrições de Infineon IRFSL7430PBF fornecidas pelos seus distribuidores.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
Infineon SCT
TUBE / MOSFET, 40V, 195A, 1.2 mOhm, 300 nC Qg, TO-262
Trans MOSFET N-CH Si 40V 426A 3-Pin(3+Tab) TO-262 Tube
IRFSL7430 12V-300V N-CHANNEL POWER MOSF;
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Histórico de estoque
Tendência de 3 meses: +0.00%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Especificações técnicas
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Weight2.084002 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance970 µΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.24 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.3 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max1.2 mΩ
Schedule B8541290080
Threshold Voltage3.9 V
Turn-Off Delay Time160 ns
Turn-On Delay Time32 ns
Dimensions
Height15.01 mm