Descrições de Infineon IRFSL38N20DPBF fornecidas pelos seus distribuidores.
INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 44A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):54mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 200V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:200V; Current, Id cont:44A; Resistance, Rds on:54ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK (TO-263); Current, Id cont @ 100 degree C:32A; Current, Id cont @ 25 degree C:44A; Current, Idm pulse:180A; Power, Pd:320W; Termination Type:SMD; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds:200V; Voltage, Vds max:200V; Voltage, Vgs th max:5V; Voltage, Vgs th min:3V; Rth:0.47