Infineon IRFR3303PBF
$ 1.95
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Peças relacionadas
InfineonIPD30N03S2L20ATMA1
IPD30N03S2L20ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS, 3-Pin DPAK Infineon
Descrições
Descrições de Infineon IRFR3303PBF fornecidas pelos seus distribuidores.
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):31mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:33A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:TO-252; Current, Idm Pulse:57A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power Dissipation:57W; Power, Pd:57W; Power, Ptot:57W; SMD Marking:IRFR3303PBF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, External:6.8mm
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating33 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance750 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance31 mΩ
Package Quantity3000
Power Dissipation57 W
Rds On Max31 mΩ
Recovery Time80 ns
Rise Time99 ns
TerminationSMD/SMT
Turn-Off Delay Time16 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.223 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declarações de conformidade