Infineon IRFR220NPBF
$ 1.39
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Peças relacionadas
InfineonIRFR220NTRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
Descrições
Descrições de Infineon IRFR220NPBF fornecidas pelos seus distribuidores.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
Single N-Channel 200 V 6.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 200V, 5A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:43W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:DPAK; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:20A; SMD Marking:IRFR220N; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance300 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation43 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance600 mΩ
Package Quantity3000
Power Dissipation43 W
Rds On Max600 mΩ
Recovery Time140 ns
Resistance600 MΩ
Rise Time11 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time6.4 ns
Voltage Rating (DC)200 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade