Infineon IRFIZ34NPBF
$ 1.671
Obsolete
Preço e estoque
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Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para Infineon IRFIZ34NPBF.
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-08-25
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2011-04-25
LTD Date2011-10-25
Descrições
Descrições de Infineon IRFIZ34NPBF fornecidas pelos seus distribuidores.
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
Infineon SCT
Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3FP
Power Field-Effect Transistor, 21A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, 55V, 19A, 40 MOHM, 22.7 NC QG, TO-220 FULLPACK
Trans MOSFET N-CH 55V 21A 3-Pin(3+Tab) TO-220 Full-Pack
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 37 W
MOSFET, N, 55V, 19A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:55V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:31W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:4.1°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)21 A
Current Rating19 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Isolation Voltage2500 Vrms
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation37 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs20 V
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation31 W
Rds On Max40 mΩ
Recovery Time86 ns
Rise Time49 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time31 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)55 V
Dimensions
Height19.8 mm
Length10.6172 mm
Width4.826 mm
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para Infineon IRFIZ34NPBF.
Conformidade
Classificação ambiental
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade