Infineon IRFHM830DTR2PBF
$ 1.29
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFHM830DTR2PBF | 0 | 800 | Bulk | 5h | |||||||
| Farnell | IRFHM830DTR2PBF | 0 | 1 | 4h | ||||||||
| Microchip USA | IRFHM830DTR2PBF | 297 | 150 | Tray | 7d | |||||||
| Win Source | WS-IRFHM830DTR2PBF | 6.090 | 25 | 5h | ||||||||
| Worldway Electronics | IRFHM830DTR2PBF | 10.301 | 7 | Tape & Reel | 4h |
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Peças relacionadas
InfineonIRFHM830TR2PBF
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
InfineonIRFHM830TRPBF
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Descrições
Descrições de Infineon IRFHM830DTR2PBF fornecidas pelos seus distribuidores.
MOSFET N-CH 30V 20A PQFN / N-Channel 30 V 20A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHAN MOSFET, 30V, 40A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes
MOSFET,N CH,30V,40A,8PQFN; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Power Dissipation Pd:2.7W; Voltage Vgs Max:20V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.797 nF
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Rds On Max4.3 mΩ
Recovery Time24 ns
Rise Time20 ns
Threshold Voltage1.8 V
Turn-Off Delay Time9.1 ns
Turn-On Delay Time9.8 ns
Dimensions
Height990.6 µm
Length3.2766 mm
Width3.3 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade