Infineon IRFH5220TR2PBF
$ 2.049
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5220TR2PBF | 0 | 25 | Bulk | 18h | |||||||
| Microchip USA | IRFH5220TR2PBF | 323 | 150 | Tray | 5d | |||||||
| Win Source | WS-IRFH5220TR2PBF | 20 | 17 | 7h | ||||||||
| Worldway Electronics | IRFH5220TR2PBF | 16.004 | 7 | Tape & Reel | 6h | |||||||
| ICPartonline | IRFH5220TR2PBF | 17.198 | >1wk |
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
Descrições
Descrições de Infineon IRFH5220TR2PBF fornecidas pelos seus distribuidores.
MOSFET N-CH 200V 3.8A PQFN / N-Channel 200 V 3.8A (Ta), 20A (Tc) Surface Mount PQFN (5x6)
200V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
Trans MOSFET N-CH 200V 3.8A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,W DIO,N CH,200V,3.8A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance99.9 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time3.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.38 nF
Max Operating Temperature150 °C
Max Power Dissipation8.3 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation3.6 W
Rds On Max99.9 mΩ
Recovery Time59 ns
Resistance99.9 MΩ
Rise Time4.7 ns
Turn-Off Delay Time14 ns
Turn-On Delay Time7.2 ns
Dimensions
Height850 µm
Length6 mm
Width5 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade