Infineon IRFH5207TR2PBF
$ 1.3
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5207TR2PBF | 0 | 800 | Bulk | 19h | |||||||
| Avnet | IRFH5207TR2PBF | 0 | 800 | 4h | ||||||||
| Farnell | IRFH5207TR2PBF | 0 | 1 | 2h | ||||||||
| Microchip USA | IRFH5207TR2PBF | 245 | 150 | Tray | 20h | |||||||
| Worldway Electronics | IRFH5207TR2PBF | 17.500 | 7 | Tape & Reel | 1d |
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
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60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
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Descrições
Descrições de Infineon IRFH5207TR2PBF fornecidas pelos seus distribuidores.
75V Single N-Channel HEXFET Power MOSFET in a PQFN package
Trans MOSFET N-CH 75V 13A 8-Pin QFN T/R
MOSFET PQFN-8 (5x6) N 75V 13 A
MOSFET 75V, Gen 10.7, 10.11 mOhm max, 43.5 nC Qg
Power Field-Effect Transistor, 13A I(D), 75V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,75V,71A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time7.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.474 nF
Max Operating Temperature150 °C
Max Power Dissipation105 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
Power Dissipation3.6 W
Rds On Max9.6 mΩ
Recovery Time39 ns
Rise Time12 ns
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time7.2 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Conformidade
Classificação ambiental
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade