Descrições de Infineon IRF7769L1TRPBF fornecidas pelos seus distribuidores.
Single N-Channel 100 V 3.5 mOhm 200 nC HEXFET® Power Mosfet - DirectFET®
MOSFET Devices; INFINEON; IRF7769L1TRPBF; 100 V; 88 A; 20 V; 3.3 W
Trans MOSFET N-CH 100V 124A 15-Pin Direct-FET L8 T/R
Avnet Japan
MOSFET N-CH 100V 20A DIRECTFET / Ideal for High Performance Isolated Converter Primary Switch Socket
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 20 amperes, MG-WDSON-11, RoHS
Infineon SCT
MOSFET, N-CH, 100V, 375A, DIRECTFET L8;
XSTR MOSFET N-CH 100V 20A 3.5MOHM@1
Power Field-Effect Transistor, 375A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon NMOS, Vds=100 V, 124 A, FET
IRF7769 - 12V-300V N-CHANNEL POW
MOSFET, N-CH, 100V, 375A, DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:375A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.