Infineon IRF7473PBF
$ 1.07
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para Infineon IRF7473PBF.
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Descrições
Descrições de Infineon IRF7473PBF fornecidas pelos seus distribuidores.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 22Milliohms;ID 6.9A;SO-8;PD 2.5W;VGS +/-20
Single N-Channel 100 V 26 mOhm 61 nC HEXFET® Power Mosfet - SOIC-8
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 6.9A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.9A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:55A; Row Pitch:6.3mm; SMD Marking:F7473; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.9 A
Current Rating6.9 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.18 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance26 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max26 mΩ
Rise Time20 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)100 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para Infineon IRF7473PBF.
Conformidade
Classificação ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade