Infineon IRF7404PBF

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.04Ohm;ID -6.7A;SO-8;PD 2.5W;VGS +/-12V

Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8

Infineon P-Ch MOSFET HEXFET Series, Vds=20V, 6.7A, SOIC-8, SMD

MOSFET P-CH 20V 6.7A 8SO P-Channel 20 V 6.7A (Ta) 2.5W (Ta) Surface Mount 8-SO

-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

MOSFET, P, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:5.3A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.7V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:21A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation:1.6W; Power, Pd:1.6W; Row Pitch:6.3mm; SMD Marking:F7404; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:20V; Width, External:4.05mm