Infineon IRF7316PBF

MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.042Ohm;ID -4.9A;SO-8;PD 2W;VGS +/-20

Dual P-Channel 30 V 0.058 Ohm 23 nC HEXFET® Power Mosfet - SOIC-8

Transistor MOSFET Array Dual P-CH 30V 4.9A 8-Pin SOIC Tube

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4.9A; On Resistance, Rds(on):58mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):58mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:30A; Row Pitch:6.3mm; SMD Marking:F7316; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V