Infineon IR21368PBF

Tube IR21368PBF Half-Bridge 2008 gate driver 190ns 125C 200mA 350mA 1.5W
Obsolete

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Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IR21368PBF.

SHENGYU ELECTRONICS

Datasheet36 páginas17 anos atrás

IHS

DigiKey

iiiC

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-04-25
LTD Date2014-04-25

Descrições

Descrições de Infineon IR21368PBF fornecidas pelos seus distribuidores.

Tube IR21368PBF Half-Bridge 2008 gate driver 190ns 125C 200mA 350mA 1.5W
MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin PDIP W
Half Bridge Based IGBT/MOSFET Driver, 0.35A, CMOS, PDIP28
MOSFET Driver IC; Device Type:Bridge; No. of Outputs:6; Output Voltage:620V; Output Current:350mA; Power Dissipation, Pd:1.5W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:Through Hole; Package/Case:28-DIP ;RoHS Compliant: Yes
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.

Nomes alternativos do fabricante

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  • Infineon Technologies
  • INF
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  • INFIN
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  • INFI
  • INFENION
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  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • IRFIR21368PBF