Infineon IR21362SPBF

Tube IR21362SPBF Half-Bridge 2006 gate driver 190ns -40C~150C TJ 200mA 350mA 1.6W
$ 3.72
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Baixe as fichas de dados e a documentação do fabricante para Infineon IR21362SPBF.

IHS

Datasheet36 páginas17 anos atrás
Datasheet36 páginas17 anos atrás

SHENGYU ELECTRONICS

Newark

RS (Formerly Allied Electronics)

iiiC

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date2019-04-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2012-11-04
LTD Date2013-05-04

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Descrições

Descrições de Infineon IR21362SPBF fornecidas pelos seus distribuidores.

Tube IR21362SPBF Half-Bridge 2006 gate driver 190ns -40C~150C TJ 200mA 350mA 1.6W
Driver 600V 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin SOIC W / IC DRIVER BRIDGE 3PHASE 28SOIC
MOSFET Driver IC; Device Type:Bridge; Supply Voltage Min:12V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:28-SOIC; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:50ns ;RoHS Compliant: Yes
DRIVER, MOSFET, 3PH HIGH/LOW, 21362; Device Type:MOSFET; Module Configuration:3-Phase Bridge; Peak Output Current:350mA; Output Resistance:50ohm; Input Delay:425ns; Output Delay:400ns; Supply Voltage Range:11.5V to 20V; Driver Case Style:SOIC; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:21362; IC Generic Number:21362; Logic Function Number:21362; No. of Outputs:6; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Current + Max:250mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:12V; Package / Case:SOIC; Power Dissipation Pd:1.6W; Supply Voltage Max:20V; Supply Voltage Min:11.5V; Termination Type:SMD; Voltage Vcc Max:25V; Voltage Vcc Min:12V
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.

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