Infineon IR21362J

J BEND RoHS Compliant Discontinued Tin/Lead (Sn/Pb) IC Gate Driver 16.585mm 10/20V 0.35A 125C
Obsolete

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SHENGYU ELECTRONICS

Datasheet36 páginas17 anos atrás

IHS

Newark

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-12-12
LTD Date2010-06-12

Descrições

Descrições de Infineon IR21362J fornecidas pelos seus distribuidores.

J BEND RoHS Compliant Discontinued Tin/Lead (Sn/Pb) IC Gate Driver 16.585mm 10/20V 0.35A 125C
3 Phase Driver, Soft Turn-on, Non-inverting Input Separate High and Low Side Inputs, 200ns Deadtime.
Half Bridge Based IGBT/MOSFET Driver, 0.35A, BICMOS, PQCC32
IC DRIVER BRIDGE 3-PHASE 44-PLCC
IC GATE DRVR HALF-BRIDGE 44PLCC
VR13HC 2OUT/2PH DIGITAL CONTROLL
MOSFET Driver IC; MOSFET Driver Type:3 Phase Drivers, High Side & Low Side; High Side MOSFET Drive Type:Bootstrapped; Load Voltage Max:600V; Peak Output High Current, Ioh:250mA; Rise Time:125ns; Fall Time:50ns RoHS Compliant: No
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.

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