Infineon IPT60R180CM8XTMA1

Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET
$ 1.141
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Distribuidor
SKU
Mín.
Embalagem
Preço em massa
Avnet
IPT60R180CM8XTMA1
2.000
2K
USD
0,837
14h
Newark
2
IPT60R180CM8XTMA1
1.575
1
Cut Tape
USD
3,270
3,270
1,740
1,460
1,380
Rutronik
HVMOS1109
6.000
2K
USD
0,790
19h
Arrow Electronics
IPT60R180CM8XTMA1
1.960
1
USD
1,101
1,084
1,050
0,999
0,999
Mouser
726-IPT60R180CM8XTMA
1.485
1
Tape & Reel
USD
2,920
1,600
1,390
1,120
1,060

Histórico de estoque

Tendência de 3 meses:
-7.35%
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Cadeia de suprimentos

Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2024-03-22
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Descrições

Descrições de Infineon IPT60R180CM8XTMA1 fornecidas pelos seus distribuidores.

Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET
IHS
119W(Tc) 4.7V@ 140µA 17nC@ 10 V 1individualNChannel 600V 180mΩ@ 5.6A,10V 18A 743pF@400V SMD mount
UnikeyIC
MOSFET, N-CH, 600V, 18A, HSOF;
element14 APAC
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Infineon

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