Infineon IPL65R310E6AUMA1

MOSFET N-CH 650V 13.1A THIN-PAK / N-Channel 650 V 13.1A (Tc) 104W (Tc) Surface Mount PG-VSON-4

Trans MOSFET N-CH 650V 13.1A 4-Pin VSON EP T/R

Power Field-Effect Transistor, 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET N-CH 650V 13.1A THIN-PAK

COOLMOS N-CHANNEL POWER MOSFET

IPL65R310 650V AND 700V COOLMOS N-CHANN;

CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-VSON-4, RoHS

CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting