Infineon IPB65R420CFDATMA1

Trans MOSFET N-CH 650V 8.7A Automotive 3-Pin(2+Tab) D2PAK T/R
$ 0.787
Obsolete

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IHS

Datasheet21 páginas13 anos atrás

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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28

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Descrições

Descrições de Infineon IPB65R420CFDATMA1 fornecidas pelos seus distribuidores.

Trans MOSFET N-CH 650V 8.7A Automotive 3-Pin(2+Tab) D2PAK T/R
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO263-3, RoHS
Infineon SCT
Power Mosfet, N Channel, 8.7 A, 650 V, 0.378 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IPB65R420CFDATMA1
Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
OPTLMOS N-CHANNEL POWER MOSFET
IPB65R420 650V AND 700V COOLMOS N-CHANN;
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

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