Infineon AUIRF7379Q
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
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Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
Descrições
Descrições de Infineon AUIRF7379Q fornecidas pelos seus distribuidores.
Trans MOSFET N/P-CH Si 30V 4.8A/4.3A Automotive 8-Pin SOIC T/R
Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, NP CH, 30V, 4.8/4.3A, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Continuous Drain Current Id, N Channel:5.8A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.038ohm; On Resistance Rds(on), P Channel:0.070ohm; Power Dissipation Pd:2.5W
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max45 mΩ
Threshold Voltage1 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformidade
Classificação ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade