Infineon 2N6849
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Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Descrições
Descrições de Infineon 2N6849 fornecidas pelos seus distribuidores.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
2N6849 Series 100 V 0.30 Ohm -6.5 A P-Channel Hexfet Transistor - TO-39
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.5A; On Resistance Rds(On):0.3Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No
P CH MOSFET, -100V, 6.5A, TO-205AF; Tran; Transistor Polarity:P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:25W; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Avalanche Single Pulse Energy Eas:92mJ; Current Id Max:-6.5A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:25A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V; Weight:0.0024kg
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Body MaterialMetal
Case/PackageTO-39
Contact PlatingLead, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.4 g
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation25 W
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time140 ns
Turn-On Delay Time60 ns
Dimensions
Height4.57 mm
Lead Length14.22 mm
Conformidade
Classificação ambiental
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Declarações de conformidade