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Infineon 2EP110RXTMA1

Full-bridge transformer driver for IGBT and SiC MOSFET gate driver supply
$ 0.844
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Tendência de 3 meses:
-0.02%

Cadeia de suprimentos

Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date2024-08-23
Lifecycle StatusProduction (Last Updated: 5 months ago)

Descrições

Descrições de Infineon 2EP110RXTMA1 fornecidas pelos seus distribuidores.

Full-bridge transformer driver for IGBT and SiC MOSFET gate driver supply
GATE DRIV, IGBT, SICMOSFET, 2CH, TSSOP-8;
Full Bridge Based IGBT/MOSFET Driver, PDSO8
IGBT/MOSFET Driver, GaN HEMT, IGBT, SiC MOSFET, 2 Channels, Full Bridge, High Side and Low Side, 10 mA, 4.5 V to 20 V, 280 ns, 8 Pins, TSSOP
The 2EP110R is a full-bridge transformer driver integrated circuit in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage to supply isolated gate drivers. It is optimized for asymmetric gate driver supply due to its unique duty-cycle adjustment ability. 2EP110R also offers integrated protections for temperature, short-circuit and UVLO to help protect the system from unwanted faults

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