Diodes Inc. ZTX1051A
$ 0.555
Production
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Histórico de estoque
Tendência de 3 meses: +61.01%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descrições
Descrições de Diodes Inc. ZTX1051A fornecidas pelos seus distribuidores.
Bipolar (BJT) Transistor NPN 40V 4A 155MHz 1W Through Hole E-Line (TO-92 compati
Small Signal Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
210mV@ 100mA,4A NPN 1W 5V 10nA 150V 40V 4A TO-92 , 4.77mm*2.41mm*4.01mm
Bipolar Transistors - BJT NPN High Current
TRANSISTOR NPN 40V 5000MA TO92-3
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Typ Gain Bandwidth ft:155MHz; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C ;RoHS Compliant: Yes
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:210mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:155MHz; Hfe Min:300; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:10A; Termination Type:Through Hole; Voltage Vcbo:150V
Nomes alternativos do fabricante
Diodes Inc. possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Diodes Inc. também pode ser conhecido(a) pelos seguintes nomes:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Histórico de estoque
Tendência de 3 meses: +61.01%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
0 peça disponível
Especificações técnicas
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)150 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Voltage (VCEO)40 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency155 MHz
Gain Bandwidth Product155 MHz
hFE Min45
Max Collector Current4 A
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
Schedule B8541290080
Transition Frequency155 MHz
Voltage Rating (DC)40 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade