Nexperia PSMN1R0-30YLC,115

PSMN1R0-30YLC - N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology
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Technical Specifications

Physical
Case/PackageSOT
Number of Pins3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.645 nF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation272 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation137 W
Rds On Max1.15 mΩ
Resistance1.15 MΩ
Rise Time77 ns
Schedule B8541290080
Turn-Off Delay Time108 ns
Turn-On Delay Time44 ns

Documents

Download datasheets and manufacturer documentation for Nexperia PSMN1R0-30YLC,115.

Upverter
Datasheet14 pages9 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet14 pages9 years ago
TME
Datasheet14 pages8 years ago

Inventory History

3 month trend:
-0.52%

Supply Chain

Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 1 day ago)

Engineering Resources

View Evaluation kits and Reference designs for Nexperia PSMN1R0-30YLC,115.

Related Parts

Descriptions

Descriptions of Nexperia PSMN1R0-30YLC,115 provided by its distributors.

PSMN1R0-30YLC - N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology
N-Channel 30 V 1.5 mOhm Surface Mount Logic Level MOSFET - LFPAK-56
MOSFET, N CH, 30V, 100A, LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:30V; On Resistance
Power Field-Effect Transistor, 100A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Mosfet, N Channel, 30V, 100A, Lfpak; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.41V Rohs Compliant: Yes |Nexperia PSMN1R0-30YLC,115
MOSFET, N CH, 30V, 100A, LFPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 850µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.41V; Power Dissipation Pd: 137W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

Manufacturer Aliases

Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NEXP
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • Nexperi
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/PHILIPS
  • NEX-NXP

Technical Specifications

Physical
Case/PackageSOT
Number of Pins3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.645 nF
Max Dual Supply Voltage30 V
Max Operating Temperature175 °C
Max Power Dissipation272 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation137 W
Rds On Max1.15 mΩ
Resistance1.15 MΩ
Rise Time77 ns
Schedule B8541290080
Turn-Off Delay Time108 ns
Turn-On Delay Time44 ns

Documents

Download datasheets and manufacturer documentation for Nexperia PSMN1R0-30YLC,115.

Upverter
Datasheet14 pages9 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet14 pages9 years ago
TME
Datasheet14 pages8 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago