Nexperia PSMN041-80YLX
Production
Technical Specifications
Physical
Case/PackageSOT
Number of Pins4
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time10.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.108 nF
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Max Power Dissipation64 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation64 W
Rds On Max41 mΩ
Rise Time11.2 ns
Turn-Off Delay Time16.1 ns
Turn-On Delay Time8.6 ns
Inventory History
3 month trend: +4.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 3 days ago)
Engineering Resources
View Evaluation kits and Reference designs for Nexperia PSMN041-80YLX.
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Descriptions
Descriptions of Nexperia PSMN041-80YLX provided by its distributors.
Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
PSMN041 Series 80 V 41 mOhm Surface Mount N-Channel Logic Level MOSFET -LFPAK-56
Mosfet, N Ch, 80V, 25A, Lfpak56 Rohs Compliant: Yes |Nexperia PSMN041-80YLX
Manufacturer Aliases
Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NEXP
- NXP/NEXPERIA
- Nexperia USA
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- Nexperi
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/PHILIPS
- NEX-NXP
Inventory History
3 month trend: +4.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT
Number of Pins4
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)80 V
Fall Time10.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.108 nF
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Max Power Dissipation64 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation64 W
Rds On Max41 mΩ
Rise Time11.2 ns
Turn-Off Delay Time16.1 ns
Turn-On Delay Time8.6 ns