NXP Semiconductors PMBT2907A
Technical Specifications
Physical
Case/PackageSOT-23
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-60 V
Current6 A
Emitter Base Voltage (VEBO)-5 V
hFE Min100
Max Collector Current-600 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation250 mW
TerminationSMD/SMT
Voltage60 V
Dimensions
Height1.1 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors PMBT2907A.
element14 APAC
Farnell
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors PMBT2907A.
Descriptions
Descriptions of NXP Semiconductors PMBT2907A provided by its distributors.
600 mA 60 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB
60V, 600 MILLI AMP, PNP SWITCHING TRANSISTOR Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:250mW; DC Collector Current:600mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1.6V; Continuous Collector Current Ic Max:600mA; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:1mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; Package / Case:SOT-23; Peak Current Icm:0.8A; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:2F; Termination Type:SMD
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-60 V
Current6 A
Emitter Base Voltage (VEBO)-5 V
hFE Min100
Max Collector Current-600 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation250 mW
TerminationSMD/SMT
Voltage60 V
Dimensions
Height1.1 mm
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors PMBT2907A.
element14 APAC
Farnell