NXP Semiconductors PESD5V0L1BA

Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon
Datasheet

Price and Stock

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Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
MountSurface Mount
Number of Pins2
Technical
Ambient Temperature Range High150 °C
Breakdown Voltage7.6 V
Capacitance75 pF
Clamping Voltage33 V
DirectionBidirectional
Element ConfigurationSingle
ESD ProtectionYes
Leakage Current1 µA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Reverse Leakage Current1 µA
Min Breakdown Voltage7 V
Min Operating Temperature-65 °C
Number of Channels1
Operating Supply Voltage5 V
PackagingCut Tape
Peak Pulse Current15 A
Peak Pulse Power 500 W
Reverse Standoff Voltage5 V
Test Current5 mA
Working Voltage5 V
Dimensions
Depth1.35 mm
Height1.05 mm
Length1.8 mm
Width1.35 mm

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors PESD5V0L1BA.

Farnell
Datasheet15 pages14 years ago
Datasheet15 pages19 years ago
Upverter
Technical Drawing5 pages6 years ago
Datasheet16 pages14 years ago

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors PESD5V0L1BA.

Related Parts

Descriptions

Descriptions of NXP Semiconductors PESD5V0L1BA provided by its distributors.

Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon
Esd Protection Device, Tvs, 7.6 V, Sod-323, 2 Rohs Compliant: Yes
ESD Suppressor TVS 30kV Automotive 2-Pin SOD-323
Bi-Direct ESD protect diode,PESD5V0L1BA, PK
French Electronic Distributor since 1988
Date Code:0732+;RoHS Compliant:Yes;
500 W BIDIRECTIONAL SILICON TVS DIODE

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Technical Specifications

Physical
MountSurface Mount
Number of Pins2
Technical
Ambient Temperature Range High150 °C
Breakdown Voltage7.6 V
Capacitance75 pF
Clamping Voltage33 V
DirectionBidirectional
Element ConfigurationSingle
ESD ProtectionYes
Leakage Current1 µA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Reverse Leakage Current1 µA
Min Breakdown Voltage7 V
Min Operating Temperature-65 °C
Number of Channels1
Operating Supply Voltage5 V
PackagingCut Tape
Peak Pulse Current15 A
Peak Pulse Power 500 W
Reverse Standoff Voltage5 V
Test Current5 mA
Working Voltage5 V
Dimensions
Depth1.35 mm
Height1.05 mm
Length1.8 mm
Width1.35 mm

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors PESD5V0L1BA.

Farnell
Datasheet15 pages14 years ago
Datasheet15 pages19 years ago
Upverter
Technical Drawing5 pages6 years ago
Datasheet16 pages14 years ago

Compliance

Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago