STMicroelectronics PD85006-E
Production
In StockTechnical Specifications
Physical
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency870 MHz
Gain17 dB
Gate to Source Voltage (Vgs)15 V
Max Frequency1 GHz
Max Operating Temperature165 °C
Max Output Power6 W
Max Power Dissipation36.5 W
Min Operating Temperature-65 °C
Number of Elements1
Output Power6 W
Power Dissipation36.5 W
Test Current200 mA
Test Voltage13.6 V
Voltage Rating40 V
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics PD85006-E.
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Descriptions
Descriptions of STMicroelectronics PD85006-E provided by its distributors.
RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
6W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
Transistor RF FET N-CH 40V 2A 870MHz 3-Pin PowerSO-10RF Tube - Bag
RF MOSFET LDMOS 13.6V POWERSO10
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency870 MHz
Gain17 dB
Gate to Source Voltage (Vgs)15 V
Max Frequency1 GHz
Max Operating Temperature165 °C
Max Output Power6 W
Max Power Dissipation36.5 W
Min Operating Temperature-65 °C
Number of Elements1
Output Power6 W
Power Dissipation36.5 W
Test Current200 mA
Test Voltage13.6 V
Voltage Rating40 V