STMicroelectronics PD55008-E
Production
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency500 MHz
Gain17 dB
Gate to Source Voltage (Vgs)20 V
Input Capacitance58 pF
Max Frequency1 GHz
Max Operating Temperature165 °C
Max Output Power8 W
Max Power Dissipation52.8 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage12.5 V
Output Power8 W
Power Dissipation52.8 W
Power Gain17 dB
Schedule B8541290080
Test Current150 mA
Test Voltage12.5 V
Voltage Rating40 V
Voltage Rating (DC)40 V
Dimensions
Height3.5 mm
Length7.5 mm
Width9.4 mm
Inventory History
3 month trend: -4.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 11.696
$ 10.279
Stock
274,893
229,259
Authorized Distributors
8
5
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
-
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
4 A
4 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
52.8 W
52.8 W
Input Capacitance
58 pF
-
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics PD55008-E.
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Descriptions
Descriptions of STMicroelectronics PD55008-E provided by its distributors.
Trans RF MOSFET N-CH 40V 4A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
STMicroelectronics SCT
PD55008-E Series 500 MHz 8 W 40 V N-Channel RF Power Transistor - POWERSO-10RF
8W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rf Fet, 40V, 4A, Powerso-10Rf; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4A; Power Dissipation Pd:52.8W; Operating Frequency Min:-; Operating Frequency Max:-; Rf Transistor Case:Powerso-10Rf; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics PD55008-E
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -4.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency500 MHz
Gain17 dB
Gate to Source Voltage (Vgs)20 V
Input Capacitance58 pF
Max Frequency1 GHz
Max Operating Temperature165 °C
Max Output Power8 W
Max Power Dissipation52.8 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage12.5 V
Output Power8 W
Power Dissipation52.8 W
Power Gain17 dB
Schedule B8541290080
Test Current150 mA
Test Voltage12.5 V
Voltage Rating40 V
Voltage Rating (DC)40 V
Dimensions
Height3.5 mm
Length7.5 mm
Width9.4 mm