Vishay SIR418DP-T1-GE3
$ 0.631
NRND
Price and Stock
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SKU
Min
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Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SIR418DP-T1-GE3.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-25
Lifecycle StatusNRND (Last Updated: 5 months ago)
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Descriptions
Descriptions of Vishay SIR418DP-T1-GE3 provided by its distributors.
VISHAY SIR418DP-T1-GE3 MOSFET Transistor, N Channel, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
40V 40A 39W 5m´Î@10V20A 2.4V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
N-channel MOSFET, 40V, 50A, Vishay, PowerPAK SO-8
Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay NMOS, Vds=40 V, 23 A, PowerPAK SO-8, , 8
40V 40A 0.005 Ohm N-ch PowerPAK SO-8
MOSFET, N CH, 40V, 40A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00415ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)23.5 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.41 nF
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2.4 V
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max5 mΩ
Rise Time73 ns
Schedule B8541290080
Threshold Voltage2.4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time19 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SIR418DP-T1-GE3.
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements