Vishay SIHG11N80E-GE3

Name: Vishay SIHG11N80E-GE3
Brand: Vishay
SKU: SIHG11N80E-GE3

Transistor MOSFET N-CH 800V 12A 3-Pin TO-247AC

$ 2.188

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Distributor		SKU		Min	Pkg
TTI		SIHG11N80E-GE3	450	50	Tube			1.770	1.740	1.690	1d
TME	2	SIHG11N80E-GE3	0	1		5.490	4.820	4.100	4.100	4.100	12h
Newark		SIHG11N80E-GE3	0	1		6.780	4.800	4.080	3.950	3.950
Avnet		SIHG11N80E-GE3	0	500					1.813	1.734	3d
Arrow Electronics		SIHG11N80E-GE3	0	500					2.188	2.060

Inventory History

3 month trend: -0.28%

CAD Models

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Datasheets & Documents

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IHS

Datasheet10 pages5 years ago

Inventory History

3 month trend:

-0.28%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2017-07-29

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Vishay SIHG11N80E-GE3 provided by its distributors.

Transistor MOSFET N-CH 800V 12A 3-Pin TO-247AC

Avnet Japan

179W(Tc) 30V 4V@ 250¦ÌA 88nC@ 10 V 1N 800V 440m¦¸@ 5.5A,10V 12A 1.67nF@100V TO-247AC

UnikeyIC

Power Field-Effect Transistor, 12A I(D), 800V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SIHG11N80E-GE3

Newark