Vishay SI7121DN-T1-GE3

Name: Vishay SI7121DN-T1-GE3
Brand: Vishay
SKU: SI7121DN-T1-GE3

P-Channel 30 V 0.018 Ohm 52 W Surface Mount Power Mosfet - PowerPAK-1212-8

$ 0.618

NRND

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Distributor		SKU		Min	Pkg
DigiKey	3	SI7121DN-T1-GE3CT-ND	8,428	1	Cut Tape	1.990	1.267	0.852	0.617	0.617
TTI		SI7121DN-T1-GE3	9,000	3K	Tape & Reel					0.324	1d
TME	2	SI7121DN-T1-GE3	0	3K						0.740	4h
Newark	2	SI7121DN-T1-GE3	0	3K	Tape & Reel					0.506
TTI Europe		SI7121DN-T1-GE3	15,000	3K	Tape & Reel					0.522*	1d

Inventory History

3 month trend: -15.27%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI7121DN-T1-GE3.

Newark

Datasheet13 pages12 years ago

Datasheet13 pages13 years ago

Datasheet7 pages17 years ago

RS (Formerly Allied Electronics)

Future Electronics

iiiC

Inventory History

3 month trend:

-15.27%

CAD Models

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Supply Chain

Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI7121DN-T1-GE3 provided by its distributors.

P-Channel 30 V 0.018 Ohm 52 W Surface Mount Power Mosfet - PowerPAK-1212-8

Future Electronics

SI7121DN-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 9.6 A, 30 V, 8-PIN POWERPAK 1212

RS (Formerly Allied Electronics)

P-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 10.6A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Transistors - FETs, MOSFETs - Single 1 (Unlimited) PowerPAK® 1212-8 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 18m Ω @ 10A, 10V 16A Tc -50°C~150°C TJ MOSFET P-CH 30V 16A 1212-8

Utmel Electronic

Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: No

Newark

MOSFET, P, PPAK1212; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:25V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-16A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:52W; Power Dissipation Pd:3.7W; Rise Time:13ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

element14 APAC