STMicroelectronics STGW75H65DFB2-4

Name: STMicroelectronics STGW75H65DFB2-4
Brand: STMicroelectronics
SKU: STGW75H65DFB2-4

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT

$ 3.687

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Distributor		SKU		Min	Pkg
Verical		STGW75H65DFB2-4	1,800	2			3.532	3.532	3.532	3.532
Arrow Electronics		STGW75H65DFB2-4	1,800	1		3.532	3.532	3.532	3.532	3.532
DigiKey		497-STGW75H65DFB2-4-ND	48	1	Tube	8.720	8.720	5.075	3.687	3.557
TME	2	STGW75H65DFB2-4	36	1		6.490	6.490	6.490	6.490	6.490	23h
Newark		STGW75H65DFB2-4	0	1		7.580	6.910	6.420	6.220	6.220

Inventory History

3 month trend: -18.25%

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Inventory History

3 month trend:

-18.25%

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Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of STMicroelectronics STGW75H65DFB2-4 provided by its distributors.

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT

Future Electronics

Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube

Verical

TRENCH GATE FIELD-STOP, 650 V, 7 / IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4

Win Source

Insulated Gate Bipolar Transistor, 115A I(C), 650V V(BR)CES, N-Channel, TO-247

IHS

Short-circuit rugged IGBT, TO247-4, Tube

STMicroelectronics SCT

357W 115A 650V Trench Field Stop TO-247-4 IGBTs ROHS

Dasenic

TO247-4 IGBT 75A 650V HB2 SERI

Anglia

TRENCH GATE FIELD-STOP, 650 V, 7

Vigor Components

IGBT, SINGLE, 650V, 115A, TO-247; Continuous Collector Current:115A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:357W; Collector Emitter Voltage Max:650V; No. of Pins:4Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Newark

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TME

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element14 APAC

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names: