STMicroelectronics 2N3440
$ 0.87
Obsolete
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-06
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2013-12-17
LTD Date2014-06-17
Descriptions
Descriptions of STMicroelectronics 2N3440 provided by its distributors.
Bipolar (BJT) Transistor NPN 250V 1A 800mW Through Hole TO-39 (TO-205AD)
SILICON NPN TRANSISTOR Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
Trans GP BJT NPN 250V 1A 3-Pin TO-39 Bag
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:250V; DC Current Gain Min (hfe):40; Package/Case:TO-39; Collector Current @ hfe:.02A; DC Collector Current:1A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR, NPN, 250V TO-39; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:15MHz; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:160; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:1A; Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:1A; Current Ic hFE:20mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:15MHz; Gain Bandwidth ft Typ:15MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:1W; Power Dissipation Ptot Max:10W; Termination Type:Through Hole; Voltage Vcbo:300V; Voltage Vces:300V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)450 V
Collector Emitter Breakdown Voltage250 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)250 V
Current1 A
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency15 MHz
Gain Bandwidth Product15 MHz
hFE Min40
Max Collector Current1 A
Max Frequency15 MHz
Max Operating Temperature200 °C
Max Power Dissipation5 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation10 W
Transition Frequency15 MHz
Voltage250 V
Voltage Rating (DC)300 V
Dimensions
Diameter9.4 mm
Height6.6 mm
Length9.4 mm
Width9.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant