Semikron SKM75GB12V

Name: Semikron SKM75GB12V
Brand: Semikron
SKU: SKM75GB12V

Trans IGBT Module N-CH 1200V 114A 7-Pin

$ 109.14

Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Newark	SKM75GB12V	113	1		127.98	121.58	117.74	117.74	117.74
RS (Formerly Allied Electronics)	SKM75GB12V	0	16	Bulk			100.54	100.54	100.54	2h
element14 APAC	SKM75GB12V	225	1		130.39*	110.76*	105.51*	105.51*	105.51*	5h
Farnell	SKM75GB12V	225	1		84.296*	73.718*	72.549*	72.549*	72.549*	10h
ATI ACCURATE TECHNOLOGY	SKM75GB12V-SEMIKRON	7			98.200	83.470	83.470	83.470	83.470	2h

Inventory History

3 month trend: -58.56%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Semikron SKM75GB12V.

Farnell

Datasheet5 pages15 years ago

Datasheet5 pages16 years ago

Datasheet5 pages9 years ago

TME

iiiC

Inventory History

3 month trend:

-58.56%

Powered by

Related Parts

InfineonFP15R12W1T4BOMA1

Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-1 Tray

Details

InfineonFS25R12W1T4BOMA1

Trans IGBT Module N=-CH 1200V 45A 205000mW 18-Pin EASY1B Tray

Details

InfineonFP15R12W1T4B3BOMA1

Infineon FP15R12W1T4B3BOMA1 Common Collector IGBT Module, 28 A 1200 V, 23-Pin EASY1B, PCB Mount

Details

STMicroelectronicsBUT30V

Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, 3 Pin

Details

Descriptions

Descriptions of Semikron SKM75GB12V provided by its distributors.

Trans IGBT Module N-CH 1200V 114A 7-Pin

Verical

IGBT MODULE, DUAL N CH, 1.2KV, 114A; Transistor Polarity: Dual N Channel; DC Collector Current: 114A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tr

Farnell

IGBT, HALF BRIDGE, 1.2KV, 114A, MODULE; Continuous Collector Current:114A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Newark

Features: V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical Applications: AC inverter drives UPS Electronic welders

Semikron