ROHM RU1C002ZPTCL

Name: ROHM RU1C002ZPTCL
Brand: ROHM
SKU: RU1C002ZPTCL

RU1C002ZP Series 20 V 200 mA 1.2 Ohm Silicon SMT P-Channel Mosfet - UMT-3F

$ 0.058

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Distributor		SKU		Min	Pkg
CoreStaff	2	ST64547768	18,000	1		0.084	0.084	0.084	0.060	0.053	18h
Rutronik		TMOS1676	3,000	3K						0.045	8h
Arrow Electronics	2	RU1C002ZPTCL	177,704	1		0.223	0.107	0.083	0.054	0.027
Verical	5	RU1C002ZPTCL	177,704	46				0.083	0.054	0.027
DigiKey	3	RU1C002ZPTCLCT-ND	77,628	1	Cut Tape	0.250	0.153	0.095	0.062	0.062

Inventory History

3 month trend: -6.98%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM RU1C002ZPTCL.

IHS

Datasheet12 pages9 years ago

Newark

Future Electronics

Inventory History

3 month trend:

-6.98%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-09-12

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of ROHM RU1C002ZPTCL provided by its distributors.

RU1C002ZP Series 20 V 200 mA 1.2 Ohm Silicon SMT P-Channel Mosfet - UMT-3F

Future Electronics

Trans MOSFET P-CH 20V ±0.2A 3-Pin SOT-323FL T/R

Avnet Japan

Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

ROHM PMOS RU1C002ZP, Vds=20 V, 200 mA, SOT-323, , 3

UnikeyIC

MOSFETs P-channel VDS=20V ID=200mA SOT323FL

HQonline

MOSFET, P-CH, -20V, -0.2A, SOT-323FL; Transistor Polarity: P Channel; Continuous Drain Current Id: -200mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Farnell